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WS3100 vs. WS3060: Choosing the Right Ultrasonic Wire Bonder for Power Semiconductor Packaging

2026-03-03

1. Core Applications: From MOSFETs to IGBT Modules

wire bonding machine From Discrete MOSFETs to Complex IGBT Modules One Platform, Unlimited Flexibility

Both machines are engineered for aluminum wire bonding, a critical step in connecting semiconductor chips to external pins. However, their target applications differ based on power requirements:

  • Discrete Components: Ideal for mid-to-high power transistors, MOSFETs, and SCRs (Silicon Controlled Rectifiers).

  • Diodes: Optimized for Large Current Fast Recovery Diodes and Schottky Diodes.

  • Power Modules: The WS3100 specifically excels in high-demand IGBT (Insulated Gate Bipolar Transistor) module packaging.

  • Standard Enclosures: Seamlessly handles TO-3, TO-220, TO-126, and TO-251 package styles.

Side-by-side comparison of TO-220, TO-247, and D2PAK discrete semiconductor packages on white background, showing internal bond wire scale versus copper leadframes, commercial product photography


2. Technical Superiority: Precision Meets Power

The "WS" series distinguishes itself through several proprietary technologies designed to minimize error and maximize throughput.

Precision Drive and Stability

Both units utilize computer-controlled stepping motors for Y and Z-axis movement. Combined with precision screw rods and guides, the bond head achieves high-speed positioning without sacrificing accuracy.

Advanced Transducer Technology

The WS3100 features a newly designed transducer with significant power reserves. It includes a unique wedge installation detection feature, which prevents bonding failures caused by improper tool alignment—a common bottleneck in manual and semi-automatic setups.

Electromagnetic Pressure Control

Consistency is the hallmark of quality. These machines employ an electromagnetic automatic pressure control system, ensuring that every bond point receives the exact same force, reducing the risk of "over-bonding" or "non-stick" issues.


3. Head-to-Head Comparison: WS3100 vs. WS3060

Feature WS3100 (High Power/Heavy Wire) WS3060 (Economic/Fine Wire)
Market Position Industrial Leader / R&D Cost-Effective / High ROI
Wire Diameter 75~500μm (3-20 mil) 25~75μm (1-3 mil)
Ultrasonic Power 0~60W (Dual Channel) 0~5W (Dual Channel)
Bonding Pressure 30~1200g 30~100g
Max Bond Span 18mm (Customizable to 25mm) 9mm
Weight ~40Kg ~28Kg

4. Operational Features for High-Volume Production

To support scale, these devices include "Quality of Life" features for technicians:

  • Dual-Bond Function: Allows for two bond points on a single lead, which significantly lowers contact resistance—essential for high-current power devices.

  • Data Memory: The machines can store parameters for wire span, strength, and aim-point height. This reduces setup time when switching between transistor and diode batches.

  • Intuitive Interface: Parameters like ultrasonic power, time, pressure, and tail length are adjustable via physical knobs and switches, allowing for real-time fine-tuning.

  • Vision System: Equipped with adjustable dual-magnification microscopes (7.5x and 15x) and variable LED lighting for crystal-clear inspection of micro-bonds.


5. Conclusion: Which Model Do You Need?

Macro close-up of 25 micron gold wedge bonds on a silicon die inside a TO-247 power MOSFET package.

  • Choose the WS3100 if you are working with heavy aluminum wire (up to 500μm), large-scale power modules, or require the highest levels of precision and pressure for industrial-grade IGBTs.

  • Choose the WS3060 for fine-wire applications where cost-efficiency is a priority. It is the perfect entry-level or secondary machine for standard discrete component production lines.

Technical Note: Both models operate on 220VAC (±10%) at 50Hz and require reliable grounding to protect sensitive semiconductor circuitry from ESD (Electrostatic Discharge).