HFT-1000 Hybrid Film Thickness Measurement System | Himalaya
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Himalaya HFT‑1000 Hybrid Film Thickness Measurement System

For Power Semiconductor Packaging & Wafer-Level Metrology

Combining Spectral Reflectance (SR) and Spectroscopic Ellipsometry (SE) in one automated, SECS/GEM‑ready platform.


Overview

The HFT‑1000 is the first film thickness measurement system designed specifically for the unique demands of power device packaging. It measures die attach films (DAF)mold compoundsunderfillpassivation layers, and wafer stress – from 0.5 nm to 500 µm – in a single tool.

Unlike single‑mode systems that force you to choose between thin‑film ellipsometry or thick‑film reflectometry, the HFT‑1000 automatically switches between Spectral Reflectance (SR) and Spectroscopic Ellipsometry (SE) modes. The result: faster cycle times, fewer measurement stations, and closed‑loop process control via SECS/GEM.

“Our packaging engineers reduced DAF thickness measurement time from 8 seconds (contact stylus) to 0.5 seconds – with higher repeatability.”
— Dr. Jian Li, Senior Process Engineer, Himalaya

    Key Features

    Feature Benefit
    Hybrid SR + SE in one head Measure both thick (500 nm–500 µm) and thin (0.5 nm–50 µm) films without changing tools
    Sub‑nanometer repeatability ≤0.013 nm (static) on 202 nm SiO₂ – trust your process control limits
    Built‑in wafer stress calculation Uses Stoney formula with integrated laser bow measurement – no secondary tool
    SECS/GEM (SEMI E30, E37) Seamless integration with factory host, AMHS, and MES. Online/Offline modes
    Broadband optics (250–1000 nm) Standard; expandable to DUV (193 nm) or SWIR (2500 nm) for advanced materials
    High‑precision motion stage ±1 µm repeatability, 100 mm/s scan speed – full 12‑inch wafer mapping in <3 minutes

    Technical Specifications

    Parameter Value
    Thickness range (SR mode) 500 nm – 500 µm
    Thickness range (SE mode) 0.5 nm – 50 µm
    Wavelength range (standard) 250 – 1000 nm
    Expandable options 193 nm (DUV) or 2500 nm (SWIR)
    Repeatability (1018 nm SiO₂ on Si) Static: ≤0.026 nm; Dynamic: ≤0.034 nm
    Repeatability (202 nm SiO₂ on Si) Static: ≤0.013 nm
    Measurement spot size 10 µm – 200 µm (user‑selectable)
    Stage travel 300 mm × 300 mm (12‑inch wafers, panels)
    Stage repeatability ±1 µm
    SECS/GEM support Yes (E30, E37, HSMS)
    Stress measurement Included (laser bow + Stoney formula)
    Dimensions (system unit) 800 mm (W) × 900 mm (D) × 1700 mm (H)
    Power 100–240 VAC, 50/60 Hz, 500 W

    Applications – Proven on Production Materials

    Material Thickness Range Mode Typical Test Time
    Die Attach Film (DAF) 10–50 µm SR 0.5 sec/point
    Mold compound (epoxy) 100–500 µm SR 0.5 sec/point
    Silicon nitride passivation 100–500 nm SE 2 sec/point
    Polyimide buffer layer 5–15 µm SR or SE 2 sec/point
    SiO₂ on Si (thin gate oxide) 1–200 nm SE 2 sec/point
    Bi‑layer (Polyimide + SiO₂) 10 µm + 500 nm SR+SE sequential 4.5 sec/site

    ✅ Validated on DAF laminationcompression moldingdie bonding, and wafer-level passivation lines.


    How It Works

    1. Load a wafer or substrate (manual or AMHS).

    2. Select recipe (material stack, measurement sites). System auto‑chooses SR or SE.

    3. Measure – broadband optics and precision stage collect spectral data.

    4. Output thickness map, refractive index (n,k), and wafer stress.

    5. Send data to factory host via SECS/GEM for closed‑loop process adjustment.


    Why Choose the HFT‑1000 Over Alternatives?

    Competitor Approach Limitation HFT‑1000 Advantage
    Single‑mode ellipsometer Cannot measure thick films (>50 µm) SR mode covers to 500 µm
    Confocal / white light interferometer Poor resolution on transparent thin films SE mode resolves <1 nm
    Contact stylus profiler Slow, damages soft films (DAF) Non‑contact, 0.5 sec/point
    Separate stress measurement tool Extra handling, alignment errors Integrated bow + Stoney in one tool

    Factory Integration & Support

    • SECS/GEM Standard – Plug‑and‑play with existing MES (factory acceptance tested).

    • Offline mode – Standalone operation for engineering studies.

    • Remote diagnostics – Secure VPN access for Himalaya support.

    • Calibration kit – Includes NIST‑traceable SiO₂ on Si reference wafers.


    Ordering Information

    Model Description
    HFT‑1000‑SRSE Base system: 250–1000 nm, motion stage, SECS/GEM, stress module
    ‑DUV Optional DUV extension (193 nm for ultra‑thin high‑k films)
    ‑SWIR Optional SWIR extension (2500 nm for thick epoxy or silicon inspection)
    ‑AMHS Automated material handling interface (load port, mapping)

    Custom configurations available – contact sales.


    Get a Quote or Demo

    We offer on‑site demonstrations at Jiangsu Himalaya Semiconductor Co., Ltd. (Suzhou, China) or remote live testing with your sample wafers.

    📧 Email: seaman@himalayasemi.com
    📞 Phone: +86-15995822759
    🌐 Web: www.himalayasemi.com

    Company Address:
    Room 4234, Building 11, No. 1258 Jinfeng South Road, Mudu Town, Wuzhong District, Suzhou City, China