Laser Dicing Silicon Wafer System | Stealth Dicing for SiC & Sapphire
At-a-Glance (Production Summary)
- Materials: Si, SiC, Sapphire, PV/Solar-related wafers
- Wafer sizes: 4", 6", 8" (Standard), 12" (Optional)
- Max processing speed: Up to 1000 mm/s
- Laser type: Infrared (IR), 10–200 kHz repetition frequency
- Process: Internal modification → film expansion/separation → cleaving (die separation)
- Benefits: low chipping, low debris, narrow street potential, dry process (no cleaning step)
Application Scope (Pan-Semiconductor)
This stealth dicing system is engineered for hard-to-cut materials and yield-sensitive applications:
- Silicon wafers (Si): logic, memory, and general semiconductor devices
- Silicon carbide (SiC): power devices (e.g., MOSFETs) where kerf loss reduction is critical
- LED sapphire wafers: high edge quality to support light extraction performance
- Solar / photovoltaic materials: high-speed processing for cost-efficient throughput
Wide-angle contour correction is included to help process partial or damaged wafers automatically, reducing unnecessary scrap and manual intervention.
How Stealth Dicing Works (Internal Modification Dicing)
Unlike blade sawing, stealth dicing is a dry, non-contact method. The “cut” is created inside the wafer, not on the surface.
3-Step Process
- Internal focusing: The IR laser passes through the wafer surface and focuses at a controlled depth inside the substrate.
- Modification layer formation: Laser energy creates a controlled internal “laser layer” (micro-crack / modified region) along the dicing lines.
- Tape expansion & cleaving: External force (typically film/tape expansion) separates the wafer cleanly along the internal stress lines.
Result: clean separation with reduced chipping and debris compared with mechanical cutting.
Typical process flow:
- Laser processing to form the internal cutting layer
- Film expansion / separation
- Cleaving (die separation)
Key Features Built for Production
Wide-angle contour correction (supports broken/partial wafers)
Automatic contour correction enables stable processing even when wafers are incomplete or damaged, improving utilization and reducing manual rework.
Barcode scanning for recipe management
Barcode-driven parameter loading supports consistent production control and quick recipe switching for high-mix manufacturing.
High-precision motion platform (stable, repeatable processing)
The platform is designed for high-speed motion with high accuracy to support consistent internal layer formation at production throughput.
Autofocus + dynamic autofocus (consistent modification depth)
Focus stability is essential in stealth dicing. The system uses autofocus and dynamic autofocus to help maintain stable internal processing depth across wafers with surface height variation (SD layer depth stability is supported by the auto follow-focus design).
Multi-CCD vision configuration
Multiple CCD options support automated alignment and handling, including:
- angle correction
- level correction
- reference point calibration
- automatic CCD brightness adjustment
- recognition/handling of residual wafer pieces
Higher wafer utilization vs. blade dicing
Compared with blade (wheel) cutting, cutting streets can be reduced by more than 50%, improving die-per-wafer—especially valuable on high-cost substrates like SiC and sapphire.
Dry process (no cleaning required)
Because processing is non-contact and dry, it can reduce debris-related cleaning requirements and simplify the backend flow.
Automation-ready (4/6/8-inch standard, 12-inch optional)
Automatic loading/unloading supports efficient operation and enables one operator to monitor multiple tools (factory workflow dependent).
Key Modules That Drive Performance
Custom IR optical system + laser source
- Dedicated IR laser source and matched optical path
- Repetition frequency: 10–200 kHz
- Optical design supports stable energy delivery for consistent internal modification and production speed
High-speed, high-accuracy motion platform + motion control
- High-speed X/Y motion for throughput
- Precision mechanics and control designed for consistent line quality and repeatability
Auto follow-focus system
A precision distance sensor measures wafer surface height in real time. The follow-focus mechanism adjusts focal position accordingly to stabilize internal modification depth despite surface variation.
Global Support & Logistics
We understand that semiconductor manufacturing is a 24/7 global operation. This equipment is currently supporting yield improvements in major semiconductor hubs worldwide.
- Asia-Pacific: Full support for high-volume fabs in China, Taiwan, Japan, and South Korea.
- Southeast Asia: Logistics established for backend assembly lines in Malaysia, Singapore, Vietnam, and Thailand.
- Western Markets: Serving R&D and production facilities across Europe (Germany, UK, France) and The Americas (USA, Mexico, Brazil).
Technical Specifications (Consistent)
| Parameter | Specification |
|---|---|
| Wafer Compatibility | 4", 6", 8" (Standard), 12" (Optional) |
| Max Processing Speed | Up to 1000 mm/s |
| Laser Type | Infrared (IR) |
| Repetition Frequency | 10–200 kHz |
| Positioning Accuracy (Repeatability) | ±1 µm |
| X-Axis Straightness | ±1 µm / 300 mm |
| Motion Range (X/Y) | 430 mm × 550 mm |
| Z-Axis Repeatability | ±1 µm |
| Theta (θ) Rotation | 210° range, 15 arc-sec resolution |
| Stage Flatness | ≤ ±5 µm (within 200 mm range) |
| Facility Requirements | 220V 1-Phase, CDA 0.5–0.8 MPa, Class 1000 cleanroom |
Facility Requirements (Installation Conditions)
- Temperature: 22°C ± 2°C
- Humidity: 30–60%
- Cleanliness: Class 1000 cleanroom or better
- CDA (air pressure): 0.5–0.8 MPa
- Power: Single-phase 220V, 50Hz, ≥20A
- Power fluctuation: < 5%
- Equipment size: 1500(W) × 2100(L) × 2180(H) mm
- Net weight: 3.2 tons
- Avoid installation near: high vibration/impact sources, strong high-frequency interference, rapid temperature-change zones
Why Choose This Laser Silicon Dicing Machine?
This stealth dicing equipment is designed for manufacturers moving beyond mechanical sawing limitations, especially for:
- SiC power device production: reduce kerf loss on expensive substrates while improving edge quality
- LED/sapphire lines: support smooth edges for improved optical performance consistency
- High-mix production: barcode-driven recipe workflow + vision alignment features
- Factories targeting stable throughput: high-speed motion platform and dynamic focusing for repeatable production output
FAQ (Common Production Questions)
1) What’s the difference between stealth dicing and blade dicing?
Stealth dicing forms an internal modification layer using an IR laser and separates by controlled force, instead of mechanically cutting through the surface with a blade.
2) Is this a wet process? Does it require cleaning?
It is specified as a dry process and is designed to reduce debris and cleaning steps compared with blade sawing.
3) What wafer sizes does the system support?
4", 6", 8" standard, with 12" optional.
4) How does the system maintain consistent internal layer depth?
It uses autofocus + dynamic autofocus with an auto follow-focus mechanism based on real-time surface height measurement.
5) Can the tool handle partial or damaged wafers?
Yes. Wide-angle contour correction supports automatic processing of partial/broken wafers to reduce scrap.
Contact Us (Sample Demo / Quotation)
Send your wafer material (Si / SiC / sapphire), wafer size, thickness, and target street width requirements. We can recommend a process window and arrange a sample evaluation or demo workflow.