The Complete Guide to SiC Wafer Dicing: Laser-Guided Cutting & Three-Point Contact Breaking for 4H-SiC, 6H-SiC, and 8-Inch Wafers
The Complete SiC Dicing Process Workflow
Our solution employs a six-step sequence that integrates laser-guided cutting with mechanical cleaving, plus additional handling steps for full automation.
Film Selection Note
Blue film is used for wafer mounting (Step 1) to secure the SiC wafer during laser cutting. After laser processing, a PET film is laminated (Step 3) to protect diced grains during transport and cleaving. PET film provides higher rigidity than blue film, ensuring clean separation during the three-point contact breaking process.
Process Workflow Table
| Step | Process | Equipment / Component | Key Function |
|---|---|---|---|
| 1 | SiC Wafer Mounting | Blue film + backside metallization | Secures wafer for laser processing |
| 2 | Laser-Guided Cutting | Fabsil-LD31S / Fabsil-LD31E | Creates internal pre-crack via picosecond laser |
| 3 | PET Film Lamination | PET film lamination module | Protects diced grains; provides rigidity for cleaving |
| 4 | Wafer Backside Dicing | Fabsil-WB32S / Fabsil-WB31E | Three-point contact cleaving from backside |
| 5 | Wafer Frontside Dicing | Integrated flipping module | Precision cleaving from frontside (after auto-flip) |
| 6 | Die Ejection with Film Expansion | Wafer piece gripping module | Final chip separation and pickup |
Technology Deep Dive: Laser-Guided Cutting (Fabsil-LD Series)
The Fabsil-LD31S / Fabsil-LD31E series laser cutting systems are precision processing equipment based on laser-guided dicing technology, designed for cutting third-generation semiconductor silicon carbide (SiC) wafers.
How It Works
By leveraging the transparency of SiC to specific laser wavelengths, the laser can be focused inside the material. This advanced picosecond laser "cold" processing technology operates by generating extremely high power density (GW/cm²) within picoseconds. This triggers a multiphoton absorption effect, creating plasma shockwaves that, combined with high-speed motion, guide the formation of pre-cracks to cut the material.
Key Technical Specifications (Fabsil-LD Series)
| Feature | Specification |
|---|---|
| FDC (Focus Depth Control) | Focus control accuracy ≤ ±5 μm; accommodates wafer thickness variations ≤ ±15 μm |
| Cutting Axis Speed | Up to 1000 mm/s with high-speed motion fluctuation < 1% |
| AI Vision Accuracy | ±0.5 μm for cutting position identification; reduces alarm rate by 90% |
| Wafer Compatibility | 4-inch, 6-inch, and 8-inch; thickness 50–500 μm |
| Backside Metal Handling | Handles backside metal thickness ≤5 μm (optimal: no metal in dicing streets) |
| Cutting Method | Dry cutting – no protective coating, no cleaning, no film removal required |
| Dicing Modes | Supports both frontside and backside dicing with integrated flipping mechanism |
AI-Powered Automation
Developed on the Himalaya Semi AI framework and vision technology platform, the product incorporates:
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Automatic contour recognition
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Automatic level correction
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Automatic fiducial setting
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Automatic focus adjustment
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One-click startup with automatic barcode reading and recipe loading
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Production data statistics, equipment utilization tracking, and data upload capabilities
Technology Deep Dive: Wafer Cleaving (Fabsil-WB Series)
The Fabsil-WB32S / Fabsil-WB31E series wafer dicing systems integrate advanced dicing processes and high-precision motion control technologies. These systems enable fully automated wafer loading/unloading, automatic image alignment correction, automated dicing and adjustment, and production data reporting.
The Three-Point Contact Fracture Principle
After laser cutting, micro-cracks have formed on both the bottom and surface of the wafer, but the individual grains have not yet been completely separated. The dicing process is based on the principle of three-point contact fracture:
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Two support points are positioned beneath the wafer
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A dicing blade (striker) is lowered to contact the wafer's actual cutting position at the midpoint between these two supports
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This causes the grains to separate completely along the laser-cut path
Frontside vs. Backside Dicing
| Process | Description | Best For |
|---|---|---|
| Backside Dicing | Fast and efficient; blade contacts from backside | Standard SiC wafers with no top-side sensitivity |
| Frontside Dicing | Precision processing from top surface | Opaque materials or applications requiring no force above the grains |
| Automatic Flip | After backside dicing, integrated flipping mechanism flips wafer for frontside dicing | Wafers requiring both-side processing |
Key Features (Fabsil-WB Series)
| Feature | Capability |
|---|---|
| Strong Compatibility | Supports 4", 6", 8" wafers; standard SECS/GEM interfaces |
| One-Click Production | Cassette loading/unloading, auto barcode scanning, adaptive handling of full wafers and fragments, auto level calibration |
| Process Consistency | Automatic correction of dicing positions and blade depth compensation |
| Versatile Dicing Modes | Sequential dicing, reverse dicing, skip dicing, quadrant dicing |
| High-Precision Vision | AI-based image recognition for accurate identification across diverse products; prevents misidentification |
Complete Key Specifications: Fabsil-WB32S vs. Fabsil-WB31E
General & Process Specifications
| Specification | Fabsil-WB32S | Fabsil-WB31E |
|---|---|---|
| Processable Diameter | 4-inch, 6-inch | 4-inch, 6-inch, 8-inch |
| Process Technology | Three-point contact shearing; supports frontside & backside dicing for opaque materials | Same |
| Applicable Material | Silicon Carbide (SiC) | Silicon Carbide (SiC) |
Motion Axis Specifications
| Axis | Parameter | Fabsil-WB32S | Fabsil-WB31E |
|---|---|---|---|
| Y-axis | Travel | 158 mm | 215 mm |
| Max speed | 120 mm/s | 120 mm/s | |
| Straightness | ±0.002 mm | ±0.002 mm | |
| Repeatability | ±0.002 mm | ±0.002 mm | |
| Upper X-axis | Travel | 265 mm | 340 mm |
| Max speed | 120 mm/s | 120 mm/s | |
| Straightness | ±0.002 mm | ±0.002 mm | |
| Repeatability | ±0.002 mm | ±0.002 mm | |
| Lower X-axis | Travel | 158 mm | 215 mm |
| Max speed | 120 mm/s | 120 mm/s | |
| Straightness | ±0.002 mm | ±0.002 mm | |
| Repeatability | ±0.002 mm | ±0.002 mm | |
| Z-axis | Travel | 60 mm | 60 mm |
| Max speed | 50 mm/s | 50 mm/s | |
| Straightness | ±0.002 mm | ±0.002 mm | |
| Repeatability | ±0.002 mm | ±0.002 mm | |
| R-axis | Rotation angle | 120° | 120° |
| Repeatability | ±5 arc-sec | ±5 arc-sec | |
| Rotation speed | 90°/s | 90°/s |
Mechanical & Component Specifications
| Component | Parameter | Fabsil-WB32S | Fabsil-WB31E |
|---|---|---|---|
| Contour Positioning | Method | Back-light contour positioning | Same |
| Accuracy | 0.1 mm | 0.1 mm | |
| Dicing Blade | Material | SK steel, HRC65 | SK steel, HRC65 |
| Length | 165 mm | 210 mm | |
| Support Stage | Material | SKD11, HRC58 | SKD11, HRC58 |
| Length | 165 mm | 210 mm | |
| Striker | Type | Electronic striker with controllable impact force | Same |
| Camera System | Wide-angle | 5 MP (1 unit) | 5 MP (1 unit) |
| Angle correction | 1.6 MP (2 units) | 1.6 MP (2 units) | |
| Industrial PC | OS | Windows 10, 64-bit | Same |
| RAM | 16 GB | Same | |
| Storage | 1 TB HDD | Same |
Facility & Environmental Requirements
| Parameter | Specification (Both Models) |
|---|---|
| Power Supply | Single-phase 220 V / 50 Hz / 10 A; grid fluctuation <5% |
| Compressed Air Pressure | 0.6–0.8 MPa |
| Compressed Air Flow | ≥80 L/min |
| Ambient Temperature | 22 ± 2 °C |
| Relative Humidity | 40%–60% |
| Cleanliness | Class 1000 or higher |
| Floor Vibration | Amplitude <0.005 mm; acceleration <0.05 G |
Physical Dimensions & Weight
| Parameter | Fabsil-WB32S | Fabsil-WB31E |
|---|---|---|
| Dimensions (W×D×H) | 1400 × 975 × 2100 mm | 1500 × 1120 × 2100 mm |
| Net Weight | Approx. 0.9 ton | Approx. 1 ton |
Prohibited Installation Locations
The equipment must NOT be placed in areas with:
| Category | Specific Prohibitions |
|---|---|
| Chemical hazards | Places accessible to chemicals, flammable or explosive materials |
| Electrical interference | Areas near high-frequency heating sources |
| Thermal instability | Locations with rapid ambient temperature changes |
| Airborne contaminants | Areas with high concentrations of CO₂, NOₓ, or SOₓ |
Layout and Processing Workflow (Fabsil-WB Series)
Automated Workflow Sequence
Cassette Loading → Rail Transport → Barcode Reading → Contour Extraction → Stage Loading → Reference Point Setting → Level Calibration → Wafer Dicing → Unloading Completion
System Modules
| Module | Function |
|---|---|
| 1. Front Side Dicing Vision Module | Precision alignment for frontside dicing |
| 2. Dicing Splitting Module | Three-point contact cleaving mechanism |
| 3. Wafer Piece Gripping Module | Handles diced wafer pieces |
| 4. Wide Angle Positioning Module | Initial wafer contour detection |
| 5. Processing Stage | High-precision machining platform |
| 6. Loading/Unloading Module | Cassette-based automated handling |
Additional support modules:
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Leveling correction module
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Precision optical system
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Coaxial module / Material change module
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FDC module
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Anti-fall module
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X/Y high-precision linear motors
Frequently Asked Questions (FAQ)
General Process Questions
Q1: What is the maximum wafer thickness the Fabsil system can handle?
A: The Fabsil series supports SiC wafer thicknesses from 50 μm to 500 μm, compatible with 4-inch, 6-inch, and 8-inch wafers.
Q2: Does the Fabsil system require chemical cleaning after dicing?
A: No. The dry cutting process requires no protective coating, no cleaning, and no film removal. This eliminates chemical waste and reduces cost of ownership.
Q3: Can this system dice SiC wafers with backside metal?
A: Yes. The system can handle SiC wafers with backside metal thickness ≤5 μm. Optimal results are achieved when no metal is present within the dicing streets.
Q4: What is the difference between blue film and PET film in your process?
A: Blue film is used for initial wafer mounting before laser cutting. PET film is laminated after laser cutting to protect the diced grains during transport and provide the rigidity needed for clean three-point contact cleaving.
Technical & Performance Questions
Q5: How does the FDC (Focus Depth Control) system work?
A: The self-developed FDC system adjusts the laser cutting depth in real-time, compensating for wafer thickness variations up to ±15 μm with a focus control accuracy of ≤ ±5 μm. This ensures the pre-crack remains perfectly centered even on warped wafers.
Q6: What is the three-point contact fracture principle?
A: After laser cutting creates internal micro-cracks, two support points are positioned beneath the wafer. A dicing blade (striker) contacts the midpoint between these supports, causing the grains to separate completely along the laser-scribed lines without additional force or damage.
Q7: What are the vibration requirements for installation?
A: The equipment requires floor vibration amplitude <0.005 mm and vibration acceleration <0.05 G. Avoid locations with significant vibration, shock, or proximity to high-frequency heating sources.
Q8: Does the system support factory automation standards?
A: Yes. The Fabsil-WB series features standard SECS/GEM interfaces, enabling seamless integration into automated semiconductor fabs with production data reporting, equipment utilization tracking, and remote monitoring capabilities.
Still have questions?
Our engineering team is ready to help. Contact us for:
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Process consultation for your specific SiC wafer specifications
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On-site or virtual demonstrations
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Customization requests for special materials or thicknesses
📧 Email: seaman@himalayasemi.com
📞 Phone: +86-159-9582-2759
Summary: Why Himalaya Semi's Solution Leads the Industry
| Requirement | Himalaya Semi Solution |
|---|---|
| Low chipping & crack-free | Laser-guided pre-crack + three-point contact breaking |
| No contamination | Dry cutting – no chemicals, no cleaning required |
| Handles warped wafers | FDC system with real-time depth adjustment (±15 μm tolerance) |
| High throughput | 1000 mm/s cutting speed; fully automated cassette-to-cassette |
| 8-inch ready | Fabsil-WB31E supports 8-inch wafers with 340 mm X-axis travel |
| AI-driven accuracy | ±0.5 μm vision alignment; 90% alarm reduction |
| SECS/GEM compliant | Ready for factory automation and data integration |
| Flexible dicing modes | Sequential, reverse, skip, and quadrant dicing |
| Process consistency | Automatic blade depth compensation and position correction |
Conclusion
As SiC wafers transition from 4-inch and 6-inch to 8-inch diameters, the industry requires a dicing solution that combines laser precision with mechanical reliability. Himalaya Semi's Fabsil-LD series (laser cutting) and Fabsil-WB series (wafer cleaving) deliver a complete, chemical-free, high-yield process—from wafer mounting and PET lamination to final die ejection.
By integrating real-time FDC focus control, AI-driven vision alignment, and the three-point contact fracture principle, we ensure that SiC's hardness and brittleness no longer dictate your production yield.
📄 Download the Fabsil Series Datasheet
Get complete technical documentation including:
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Full dimensional drawings
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Detailed installation requirements
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Electrical and facility specifications
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Process validation data
📞 Request a Quote or Consultation
Ready to improve your SiC dicing yield?
| Option | Contact Information |
|---|---|
| seaman@himalayasemi.com | |
| Phone | +86 (159) 95822759 |
| Web | www.himalayasemi.com/contact |
| Request Form | www.himalayasemi.com/quote |
Or fill out this quick form:
| Field | Your Response |
|---|---|
| Name | _______________ |
| Company | _______________ |
| Wafer Size (4"/6"/8") | _______________ |
| Wafer Thickness (μm) | _______________ |
| Backside Metal? (Y/N) | _______________ |
| Estimated Annual Volume | _______________ |
| Best Time to Contact | _______________ |
Our team will respond within 2 business days.
About the Author
Dr. Jian Li is a Senior Process Engineer at Himalaya Semi specializing in micro-machining. With 15 years of experience and key patents in dicing control systems (including the DS9260 dicing saw's control system), he leads the development of advanced dicing solutions for third-generation semiconductors.
Contact Information
Headquarters & R&D Center
Room 4234, Building 11, No. 1258 Jinfeng South Road,
Mudu Town, Wuzhong District, Suzhou City, Jiangsu Province, China
Sales Office
No. 58, Keji 3rd Road, High‑Tech Zone, Yanta District, Xi’an, China
Jiangsu Himalaya Semiconductor Co., Ltd.
Appendix: Quick Reference Specifications Table
| Parameter | Fabsil-LD31E (Laser) | Fabsil-WB31E (Cleave) |
|---|---|---|
| Wafer Sizes | 4", 6", 8" | 4", 6", 8" |
| Thickness Range | 50–500 μm | 50–500 μm |
| Key Accuracy | Focus ≤ ±5 μm | Position ±0.002 mm |
| Max Speed | 1000 mm/s | 120 mm/s |
| Vision Accuracy | ±0.5 μm | 0.1 mm (contour) |
| Cutting/Cleaving Method | Picosecond laser (GW/cm²) | Three-point contact |
| Automation | One-click + SECS/GEM | One-click + SECS/GEM |
| Environmental Class | Class 1000+ | Class 1000+ |