0102030405
Wafer‑Level TGV Laser Micro‑Via Drilling System for Advanced Glass Substrate Packaging
Ultra-Fine Vias
≤5 µm diameter, aspect ratio up to 1:100 for high-density interconnects.
High Throughput
≥5000 points/s for mass production & high-volume manufacturing.
Multi-Material
Quartz, borosilicate, soda‑lime, aluminosilicate glass.
Multi-Shape Capability
Round, square, blind, through, micro‑trench vias.
Precision
Repeatability ≤±1 µm; pattern accuracy ≤±3 µm.
Automated Handling
Supports 4–12 inch wafers, basket-type loading.
Core Technologies
Laser Modification Physics
Controlled laser-induced micro-structuring for clean vias.
Controlled laser-induced micro-structuring for clean vias.
High-Precision Motion Control
XY stage repeatability ≤1 µm.
XY stage repeatability ≤1 µm.
Thermal-Stress Optimization
Minimizes substrate cracking & residual stress.
Minimizes substrate cracking & residual stress.
Automated Wafer Handling
4–12 inch, basket-type load/unload, FOUP compatible.
4–12 inch, basket-type load/unload, FOUP compatible.
Technology Comparison
| Technology | Via Size | Aspect Ratio | Material Compatibility | Notes |
|---|---|---|---|---|
| Laser TGV | ≤5 µm | Up to 1:100 | Quartz, Borosilicate, Soda-lime, Aluminosilicate | Ideal for high-density packaging |
| Mechanical Drilling | >30 µm | <1:10 | Limited | Slow, risk of chipping |
| Chemical Etching | 10–50 µm | 1:5–1:20 | Glass only | Poor shape control, isotropic |
| Ultrasonic Drilling | >20 µm | <1:10 | Limited | Not suitable for fine-pitch ICs |
Technical Specifications
Substrate Size4–12 inch round or square glass wafers
Loading MethodAutomatic basket-type / cassette
Processing MethodFixed laser + high-precision XY motion platform
Platform Speed≤1000 mm/s
Minimum Via Diameter5 µm
Max Aspect Ratio1:100
Platform Repeatability≤±1 µm
Positioning Accuracy<±2 µm
Pattern Accuracy≤±3 µm @ 300 mm field
Throughput≥5000 points/s
Applications
Glass-based IC packaging Display driver ICs High-density interposers MEMS and sensor modules Optical and RF packaging HPC & AI accelerators (glass interposers)
Selection Guide
Choose this system if your production requires:
- Ultra-fine vias ≤5 µm
- High aspect ratio (1:100)
- Multi-shape drilling (blind, through, trench)
- High-volume throughput (≥5000 points/s)
- Multi-glass substrate compatibility
- Tight alignment precision (<±3 µm)
Future Trends
Rapid adoption
Glass interposers for HPC & AI accelerators.
Sub-5 µm vias demand
Increasing need for higher interconnect density.
Hybrid bonding & Cu-plating
Seamless integration with metal filling workflows.
Panel-Level Packaging (PLP)
Scaling to large-format glass substrates.
Frequently Asked Questions
Q1: What is the smallest via size achievable?
A: 5 µm, enabling high-density interconnects for advanced glass packaging.
Q2: Which glass materials are compatible?
A: Quartz, borosilicate, soda‑lime, aluminosilicate glass, and more.
Q3: What aspect ratios are achievable?
A: Up to 1:100 for deep, narrow vias without cracking.
Q4: How fast is the drilling throughput?
A: ≥5000 points/s, suitable for mass production and high-volume fabs.
Q5: Which applications benefit most?
A: Glass IC packaging, display drivers, MEMS, high-density interposers, AI accelerators.
Q6: Does the system handle blind & through vias?
A: Yes, multi-shape capability: round, square, blind, through, and micro-trench vias.
Unlock the Potential of Glass Substrate Packaging
Precision TGV laser drilling system engineered for next-gen IC substrates, interposers, and 3D heterogeneous integration.
≥5000 vias/s 5µm / 1:100 AR ±1µm repeatability
Contact our engineering team for process demonstration & integration support.