Vacuum Ion Implantation System For Semiconductor Manufacturing
Ion Implanter Technical Overview
A high-precision accelerator system for semiconductor doping, surface modification, and thin-film fabrication, combining ion beam acceleration, mass analysis, and vacuum engineering.
Core Specifications
| Parameter | Value/Range |
| Acceleration Energy | 5keV–200keV (univalent ions) |
| Wafer Compatibility | 2"–8" wafers + irregular fragments |
| Implantable Ions | B, P, As, Al, S, H, Mg, Si |
| Dose Accuracy | ≤1.5% |
| Dose Range | 1×10¹¹–1×10¹⁶ atoms/cm² |
| Tilt Angles | 0°, 7°(room temp); 0° (high temp) |
Key Subsystems
2.Key Subsystems
A. Ion Source System
Components:
● Plasma-based ion generator (e.g., Freeman or Bernas source)
● 5 solid-source vaporizers (700°C operation)
● Gas delivery system for dopant precursors (e.g., BF₃for boron)
Purpose: Generates and extracts ion species with precise charge states.
B. Beamline Optics
1. Mass Analyzer
● Uses magnetic deflection to select ions by mass/charge ratio (e.g., separates ᴮ⁺ from ᴾ⁺).
3.Acceleration/Deceleration
● Adjusts beam energy dynamically (200keV max → 5keV low-end).
4.Beam Scanning
● Electrostatic or magnetic scanning for uniform wafer coverage.
C.Vacuum Systems
| Section | Pressure Threshold | Critical Components |
| Ion Source | ≤7×10⁻⁴ Pa | Turbo pumps, cryopanels |
| Beam Transport | ≤7×10⁻⁵ Pa | Quadrupole lenses, beam gates |
| End Station | ≤7×10⁻⁵ Pa | Load-lock, wafer handling robots |
Advanced Capabilities
● High-Temperature Processing: 0° implant at elevated temps for defect annealing (e.g., SiC device fabrication).
● Solid-Source Flexibility: Vaporizers support refractory materials like Al (for p-type doping in III-V semiconductors).
Industry Benchmark Comparison
● Throughput: Competitive with Axcelis GSD/GPH series but optimized for R&D-scale flexibility.
● Energy Range: Broader low-energy capability vs. traditional implanters (e.g., Varian E500).